BTA316-600BT Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza

componentes Descripción

Fabricante

BTA316-600BT

3Q Hi-Com Triac

WeEn Semiconductors 

BTA316-600BT

3Q Hi-Com Triac

12 September 2018

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for

use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac

will commutate the full RMS current at the maximum rated junction temperature without the aid of a

snubber where "high junction operating temperature capability" is required

2. Features and benefits

• 3Q technology for improved noise immunity

• High commutation capability with maximum false trigger immunity

• High immunity to false turn-on by dV/dt

• High junction operating temperature capability

• High voltage capability

• Planar passivated for voltage ruggedness and reliability

• Triggering in three quadrants only

3. Applications

• Applications subject to high temperature

• Electronic thermostats (heating and cooling)

• High power motor controls e.g. washing machines and vacuum cleaners

• Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

IT(RMS)

RMS on-state current full sine wave; Tmb ≤ 126 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

Tj

junction temperature

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

600 V

-

-

16

A

-

-

140 A

-

-

150 A

-

-

150 °C

2

-

50

mA

Share Link: