BTA312Y-800C Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BTA312Y-800C Datasheet PDF : 13 Pages
| |||
WeEn Semiconductors
BTA312Y-800C
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 84 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 0.2 A
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
30
IT(RMS)
(A)
003aab807
15
IT(RMS)
(A)
20
10
Min Max Unit
-
800 V
-
12
A
-
100 A
-
110 A
-
50
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 125 °C
-
125 °C
003aab805
10
5
010-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tmb = 84 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
-50
0
50
100
150
Tmb(°C)
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BTA312Y-800C
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13
Share Link: 