WeEn Semiconductors
11. Characteristics
Table 8. Characteristics
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A;Tj = 25 °C
Fig. 11
VD = 400V; IT = 0.1 A;Tj = 150 °C
VD = 800 V; Tj = 25 °C
VD = 800 V; Tj = 150 °C
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
BTA312X-800CT
3Q Hi-Com Triac
Min Typ Max Unit
2
-
35
mA
2
-
35
mA
2
-
35
mA
-
-
50
mA
-
-
60
mA
-
-
50
mA
-
-
35
mA
-
1.3 1.6 V
-
0.8 1
V
0.25 0.4 -
V
-
-
10
μA
-
-
1
mA
500 -
-
V/μs
300 -
-
V/μs
20
-
-
A/ms
BTA312X-800CT
Product data sheet
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20 August 2020
© WeEn Semiconductors Co., Ltd. 2020. All rights reserved
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