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BTA312X-800CT/L01Q Datasheet PDF : 12 Pages
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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
mb
BTA312X-800CT
3Q Hi-Com Triac
Min Typ Max Unit
2
-
35
mA
2
-
35
mA
2
-
35
mA
-
-
35
mA
-
1.3 1.6 V
500 -
-
V/μs
300 -
-
V/μs
20
-
-
A/ms
Graphic symbol
T2
T1
G
sym051
1 23
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA312X-800CT
TO220F
Orderable part number
BTA312X-800CTQ
BTA312X-800CT/L01 TO220F BTA312X-800CT/L01Q
Packing Small packing Package
method quantity
version
Tube 50
SOT186A
Package
issue date
14-Nov-2013
Tube 50
SOT186A/L01 14-Nov-2013
7. Marking
Table 4. Marking codes
Type number
BTA312X-800CT
BTA312X-800CT
Product data sheet
Marking codes
BTA312X
800CT
All information provided in this document is subject to legal disclaimers.
20 August 2020
© WeEn Semiconductors Co., Ltd. 2020. All rights reserved
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