BTA312B-800ETJ Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
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BTA312B-800ETJ Datasheet PDF : 13 Pages
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WeEn Semiconductors
BTA312B-800ET
3Q Hi-Com Triac
20
Ptot
(W)
16
12
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
8
α
α
003a a b808 75
α = 180°
1 2 0°
Tmb (max)
(°C)
85
90°
95
6 0°
3 0°
105
4
115
0
125
0
3
6
9
12
IT(RMS) (A)
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
103
ITSM
(A)
003aab806
(1)
102
IT
ITSM
10
10-5
10-4
10-3
10-2
t
tp
Tj(init) = 25 °C max
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312B-800ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 April 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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