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BTA312B-800B Datasheet PDF : 13 Pages
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WeEn Semiconductors
BTA312B-800B
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 100 °C;
Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig 4; Fig 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t
I2t for fusing
tP = 10 ms; SIN
dIT/dt
rate of rise of on-state
current
IG = 120 mA
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
15
IT(RMS )
(A)
10
003a a b686
50
IT(RMS )
(A)
40
30
Min Max Unit
-
800 V
-
12
A
-
100 A
-
110 A
-
50
A2s
-
100 A/μs
-
2
A
-
5
W
-
0.5
W
-40
150 °C
-
125 °C
003a a b687
20
5
10
0
-5 0
0
50
100
150
Tmb (°C)
010-2
10-1
1
10
s urge duration (s )
f = 50 Hz; Tmb = 100 °C
Fig. 1. RMS on-state current as a function of mounting Fig. 2. RMS on-state current as a function of surge
base temperature; maximum values
duration; maximum values
BTA312B-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 April 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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