BTA312B-800B Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BTA312B-800B Datasheet PDF : 13 Pages
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WeEn Semiconductors
Symbol Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating curren
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
2
1
3
BTA312B-800B
3Q Hi-Com Triac
Min Typ Max Unit
2
-
50
mA
2
-
60
mA
-
-
60
mA
-
1.3 1.6 V
1000 2000 -
V/μs
30 -
-
A/ms
Graphic symbol
T2
T1
G
sym051
6. Ordering information
Table 3. Ordering information
Type number
BTA312B-800B
Package Orderable part number
Name
TO263 BTA312B-800B,118
Packing
method
Reel
Small packing
quantity
800
Package
version
TO263E
Package
issue date
26-May-2017
BTA312B-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 April 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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