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BTA312-600CT Datasheet PDF : 13 Pages
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WeEn Semiconductors
BTA312-600CT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 125 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 70 mA
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
16
IT(RMS )
(A)
12
003a a b688
50
IT(RMS )
(A)
40
30
8
20
4
10
Min Max Unit
-
600 V
-
12
A
-
100 A
-
110 A
-
50
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
150 °C
003a a f738
0
-5 0
0
50
100
150
Tmb (°C)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
010-2
10-1
1
10
s urge duration (s )
f = 50 Hz; Tmb = 125 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA312-600CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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