DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BTA312-600C Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza
componentes Descripción
Fabricante
BTA312-600C
WEEN
WeEn Semiconductors WEEN
BTA312-600C Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
WeEn Semiconductors
BTA312-600C
3Q Hi-Com Triac
Symbol
Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
2
-
35
mA
-
-
35
mA
-
1.3 1.6 V
500 -
-
V/µs
20
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA312-600C
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BTA312-600C
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]