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BTA308Y-800C0T Datasheet PDF : 12 Pages
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WeEn Semiconductors
BTA308Y-800C0T
3Q Hi-Com Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 121°C;
Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on-
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
state current
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
I2t
I2t for fusing
tp = 10ms; sine wave
dIT/dt
rate of rise of on-state
current
IG = 70mA
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
Values
800
8
60
65
18
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A2s
A/μs
A
W
W
°C
°C
10
IT(RMS)
(A)
8
6
4
2
bfdc17-001
121 °C
14
IT(RMS)
(A)
12
10
8
bfdc17-002
0
-50
0
50
100
150
Tmb (°C)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
6
10-2
10-1
1
10
surge duration (s)
f = 50Hz; Tmb = 121 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA308Y-800C0T
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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