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BTA308X-800B0 Datasheet PDF : 13 Pages
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WeEn Semiconductors
BTA308X-800B0
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 75 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 0.2 A
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min Max Unit
-
800 V
-
8
A
-
60
A
-
65
A
-
18
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
60
IT(RMS)
(A)
50
40
30
20
10
aaa-013266
10
IT(RMS)
(A)
8
6
4
2
aaa-013263
75 °C
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Th = 75 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
-5 0
0
50
100
150
Th (°C)
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
BTA308X-800B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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