DMTH6005LPSQ-13 Ver la hoja de datos (PDF) - Diodes Incorporated.
Número de pieza
componentes Descripción
Fabricante
DMTH6005LPSQ-13 Datasheet PDF : 7 Pages
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0.014
0.012
0.01
VGS = 4.5V, ID = 12.5A
0.008
0.006
0.004
0.002
VGS = 10V, ID = 50A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
100
90 VGS = 0V
80
70
60
50
40
TJ = 125oC
30
TJ = 150oC
20
TJ = 175oC
10
TJ = 85oC
TJ = 25oC
TJ = -55oC
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3
2
1
0
0
VDS = 30V, ID = 50A
5 10 15 20 25 30 35 40 45 50
Qg (nC)
Figure 11. Gate Charge
DMTH6005LPSQ
4
3.5
3
2.5
ID = 1mA
2
1.5
ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f = 1MHz
1000
Ciss
Coss
100
Crss
10
0
5 10 15 20 25 30 35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
100
RDS(ON)
Limited
PW = 1µs
10
PW = 10µs
PW = 100µs
1 TJ(Max) = 175℃
TC = 25℃
Single Pulse
0.1 DUT on Infinite
PW = 1ms
PW = 10ms
PW = 100ms
0.01
Heatsink
VGS = 10V
PW = 1s
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMTH6005LPSQ
Document number: DS38359 Rev. 2 - 2
4 of 7
www.diodes.com
February 2018
© Diodes Incorporated
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