DMTH4007SPSQ-13 Ver la hoja de datos (PDF) - Diodes Incorporated.
Número de pieza
componentes Descripción
Fabricante
DMTH4007SPSQ-13 Datasheet PDF : 8 Pages
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DMTH4007SPSQ
0.01
0.009
0.008
0.007
0.006
VGS=10V, ID=20A
0.005
0.004
0.003
0.002
0.001
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
25
VGS=0V, TA=125℃
20
VGS=0V, TA=150℃
15 VGS=0V, TA=175℃
VGS=0V, TA=85℃
10
VGS=0V, TA=25℃
5
VGS=0V, TA=-55℃
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
4
3.5
3
2.5
ID=1mA
2
ID=250μA
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
10000
f=1MHz
Ciss
1000
Coss
100
Crss
10
0
5 10 15 20 25 30 35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
R DS(on)
Limited
100
PW = 1µs
6
VDS=30V, ID=20A
4
2
0
0 5 10 15 20 25 30 35 40 45
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
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DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
5 of 8
www.diodes.com
PW = 1s
PW = 100ms
10
PW = 10ms
PW = 1ms
PW = 100µs
1 TJ(m ax) = 175°C
TC = 25°C
PW = 10µs
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
.1.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
November 2015
© Diodes Incorporated
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