DMT3002LPS-13(2016) Ver la hoja de datos (PDF) - Diodes Incorporated.
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DMT3002LPS-13 Datasheet PDF : 7 Pages
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DMT3002LPS
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±16
V
Continuous Drain Current, VGS = 10V (Note 7)
Steady
State
TC = +25°C
TC = +70°C
ID
100
100
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
100
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
IDM
150
A
Avalanche Current, L=3mH (Note 8)
IAS
15
A
Avalanche Energy, L=3mH (Note 8)
EAS
700
mJ
Thermal Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RθJA
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.2
103
2.5
51
136
1.1
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
30
IDSS
—
IGSS
—
—
—
—
1
—
±100
VGS(TH)
1
—
RDS(ON)
—
VSD
—
—
2
1.25 1.6
2
2.5
0.8
1.1
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
— 5,000 —
— 2,660 —
—
300
—
—
0.75
—
—
37
—
—
77
—
—
10
—
—
14
—
—
21
—
—
45
—
—
32
—
—
26
—
—
44
—
—
52
—
Unit
Test Condition
V
VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V
VDS = VGS, ID = 1mA
mΩ VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V
VGS = 0V, IS = 25A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 25A
ns
VDD = 15V, VGS = 4.5V,
ID = 25A, RG = 4.7Ω
ns
nC IS = 15A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated
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