PJM3018NSA Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
PJM3018NSA Datasheet PDF : 6 Pages
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Electrical Characteristics
(TA=25℃, unless otherwise noted)
PJM3018NSA
N- Enhancement Mode Field Effect Transistor
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Parameters
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA
30
-
-
V
Gate Leakage Current
IGSS VDS = 0V, VGS = ±20V
-
-
±10
μA
Zero Gate Voltage Drain Current
Gate Threshold Voltage Note2
IDSS VDS =30V, VGS = 0V
VGS(th) VDS = VGS, ID = 250μA
-
-
1
μA
1
-
2
V
Drain-Source On-Resistance Note2
VGS = 4.5V, ID =10mA
RDS(ON)
VGS = 2.5V, ID =1mA
-
-
8
Ω
-
-
13
Ω
Forward transconductance Note2
gfs VDS = 3V, ID =10mA
20
-
-
mS
Dynamic Parameters
Input Capacitance
Output Capacitance
Ciss
Coss VDS=5V, VGS=0V, f=1MHZ
-
13
-
-
9
-
pF
Reverse Transfer Capacitance
Crss
-
4
-
Switching Parameters
Turn-On Delay Time
td(on)
-
15
-
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=5V, VGS=5V
-
35
-
RG=10Ω, RL=500Ω, ID=10mA
ns
td(off)
-
80
-
Turn-Off Fall Time
tf
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
-
80
-
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Revision：1.0 Nov-2018
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