SI4483EDY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4483EDY Datasheet PDF : 6 Pages
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Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
0.6
40
ID = 250 µA
0.4
30
0.2
20
0.0
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
100
Limited by
RDS(on)*
10
1
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
www.vishay.com
4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
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