SI4482DY Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI4482DY Datasheet PDF : 4 Pages
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Si4482DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrenNO TAG
Drain-Source On-State Resis-
tanceNO TAG
Forward TransconductanceNO TAG
Diode Forward VoltageNO TAG
DynamicNO TAG
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 4.6 A
VGS = 6 V, ID = 4.0 A
VDS = 15 V, ID = 4.6 A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 50 V, VGS = 10 V, ID = 4.6 A
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min
Typ
NO TAG
Max
Unit
2
V
"100 nA
1
mA
20
20
A
0.045 0.060
W
0.050 0.080
20
S
1.2
V
30
50
7.5
nC
7
13
25
12
25
60
90
ns
25
40
50
80
3-2
Siliconix
New Product
S-54844—Rev. A, 15-Sep-97
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