SI4482DY-T1-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4482DY-T1-E3 Datasheet PDF : 5 Pages
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Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
0.08
10
0.06
TJ = 150 °C
0.04
TJ = 25 °C
0.02
ID = 4.6 A
1
0
0.2 0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
0.0
- 0.3
ID = 250 µA
- 0.6
- 0.9
- 1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.10
1.00
10.00
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Notes:
PDM
10 - 3
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 50 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70749.
www.vishay.com
4
Document Number: 70749
S09-0767-Rev. C, 04-May-09
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