SI4482DY(2003) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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Fabricante
SI4482DY Datasheet PDF : 4 Pages
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Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
10
0.06
TJ = 150_C
TJ = 25_C
0.04
0.02
ID = 4.6 A
1
0
0.6
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.00
0
50
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.3
40
0.0
ID = 250 µA
30
- 0.3
20
- 0.6
- 0.9
10
- 1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
0.01
0.10
1.00
10.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
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2-4
10 - 3
Single Pulse
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 70749
S-03951—Rev. B, 26-May-03
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