SI4477DY(2012) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI4477DY Datasheet PDF : 4 Pages
| |||
www.vishay.com
SPICE Device Model Si4477DY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
60
1.5
VGS = 5 V, 3.5 V, 3 V, 2.5 V
TJ = 125 °C
1.2
45
TJ = - 55 °C
0.9
30
VGS = 2 V
0.6
15
TJ = 25 °C
0.3
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
0.016
0.012
0.008
VGS = 2.5 V
0.004
VGS = 4.5 V
0.000
0
15
30
45
60
ID - Drain Current (A)
6000
Ciss
5000
4000
3000
2000
Coss
1000
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
6
ID = 18 A
4
VDS = 10 V
VDS = 15 V
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Note
• Dots and squares represent measured data.
100
TJ = 150 °C
TJ = 25 °C
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
S12-2601-Rev. B, 05-Nov-12
3
Document Number: 65215
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 