SI4425DY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4425DY Datasheet PDF : 5 Pages
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Si4425DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = −250 mA
VDS = 0 V, VGS = "20 V
VDS = −30 V, VGS = 0 V
VDS = −30 V, VGS = 0 V, TJ = 70_C
VDS = −5 V, VGS = −10 V
VGS = −10 V, ID = −11 A
VGS = −4.5 V, ID = 8.5 A
VDS = −15 V, ID = −11 A
IS = −2.7 A, VGS = 0 V
−1.0
−1.9
−3.0
V
"100
nA
−1
mA
−10
−30
A
0.010
0.014
W
0.017
0.023
23
S
−0.75
−1.1
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
trr
VDS = −15 V, VGS = −4.5 V, ID = −11 A
VDD = −15 V, RL = 10 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
IF = −2.1 A, di/dt = 100 A/ms
33
50
10
nC
13
20
30
15
25
ns
95
150
44
65
3.2
W
50
80
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
VGS = 10 thru 5 V
40
4V
40
30
30
Transfer Characteristics
20
10
3V
0
0
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
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2
20
TC = 125_C
10
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS − Gate-to-Source Voltage (V)
Document Number: 71817
S-50402—Rev. F, 07-Mar-05
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