SI4420DY Ver la hoja de datos (PDF) - Vishay Siliconix
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SI4420DY Datasheet PDF : 4 Pages
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Si4420DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(ON) (W)
0.009 @ VGS = 10 V
30
0.013 @ VGS = 4.5 V
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
ID (A)
"12.5
"10.5
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)A
Maximum Power DissipationA
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
"20
"12.5
"10.0
"50
2.3
2.5
1.6
–55 to 150
UNIT
V
A
W
_C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Maximum Junction-to-AmbientA
RthJA
50
_C/W
Notes
A. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70647.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-56945—Rev. B, 23-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
3-1
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