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SI4405DY

P-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

New Product

P-Channel 30-V (D-S) MOSFET

Si4405DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

- 30

0.0075 at VGS = - 10 V

ID (A)

- 17

SO-8

S1

S2

S3

G4

8D

7D

6D

5D

Top View

Ordering Information: Si4405DY-T1

Si4405DY-T1-E3 (Lead (Pb)-free)

FEATURES

• TrenchFET® Power MOSFETS

• 100 % Rg Tested

APPLICATIONS

• Battery and Load Switching

- Notebook Computers

- Notebook Battery Packs

S

G

D

P-Channel MOSFET

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

- 30

V

VGS

± 20

Continuous Drain Current (TJ = 150 °C)a

Pulsed Drain Current

TA = 25 °C

TA = 70 °C

ID

- 17

- 11

- 13

-9

A

IDM

- 60

Continuous Source Current (Diode Conduction)a

IS

- 2.9

- 1.30

Maximum Power Dissipationa

TA = 25 °C

TA = 70 °C

PD

3.5

1.6

2.1

1.0

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

t ≤ 10 sec

Steady State

Steady State

Symbol

RthJA

RthJF

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Typical

29

67

13

Maximum

35

80

16

Unit

°C/W

Document Number: 71913

S-70315-Rev. E, 12-Feb-07

www.vishay.com

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