SI4559ADY-T1-E3 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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SI4559ADY-T1-E3 Datasheet PDF : 14 Pages
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SI4559ADY-T1-E3
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.VBsemi.tw
20
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
ID = 250 µA
2.4
2.2
2.0
1.8
1.6
1.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.12
0.11
0.10
0.09
0.08
0.07
ID = 4.3 A
0.06
0.05
0.04
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
0.1
TA = 25 °C
0.01
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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5
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