SI3440DV(2003) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI3440DV Datasheet PDF : 5 Pages
| |||
New Product
Si3440DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.5
320
Capacitance
0.4
VGS = 6.0 V
0.3
VGS = 10 V
0.2
0.1
0.0
0
1
2
3
4
ID − Drain Current (A)
Gate Charge
10
VDS = 75 V
ID = 1.5 A
8
6
4
2
Ciss
240
160
80
Crss
Coss
0
0 10 20 30 40 50 60 70 80
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 1.5 A
2.0
1.5
1.0
0
0
1
2
3
4
5
6
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
TJ = 150_C
0.5
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.8
ID = 1.5 A
0.6
0.4
TJ = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72380
S-32412—Rev. B, 24-Nov-03
0.2
0.0
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
www.vishay.com
3
Share Link: 