SI3430DV-T1 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3430DV-T1 Datasheet PDF : 5 Pages
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Si3430DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
30
0.4
25
0.2
ID = 250 mA
20
- 0.0
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
0.01
Single Pulse Power
0.1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
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4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71235
S-31725—Rev. B, 18-Aug-03
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