SI2356DS Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI2356DS Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
5
VGS = 10 V thru 3 V
VGS = 2.5 V
4
15
3
10
VGS = 2 V
2
5
1
0
0
0
0.5
1
1.5
2
0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.07
510
Si2356DS
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.05
0.04
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0.03
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 3.2 A
8
VDS = 20 V
6
VDS = 10 V
4
VDS = 32 V
2
408
Ciss
306
204
102
0
0
1.9
Crss
Coss
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
VGS = 10 V, 3.2A
1.55
VGS = 4.5 V, 3.1A
1.2
VGS = 2.5 V, 2A
0.85
0
0
2.2
4.4
6.6
8.8
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62893
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1814-Rev. A, 12-Aug-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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