SI2347DS-T1-GE3 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
SI2347DS-T1-GE3 Datasheet PDF : 9 Pages
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SI2347DS-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
2
VGS = 10 V thru 5 V
40
1.5
VGS = 4.5 V
30
VGS = 4 V
1
20
10
0
0
VGS = 3 V
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0
0
0.08
1800
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TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.6
1.2
1.8
2.4
3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
VGS = 4.5 V
VGS = 6 V
1350
Ciss
0.04
VGS = 10 V
900
0.02
0
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 5.4 A
VDS = 8 V
8
VDS = 15 V
6
4
VDS = 24 V
2
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
450
Crss
0
0
Coss
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 5.4 A
1.3
1.1
VGS = 10 V, 6 V
VGS = 4.5 V
0.9
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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