SI2335DS Ver la hoja de datos (PDF) - KEXIN Industrial

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componentes Descripción

Fabricante

SI2335DS

P-Channel Enhancement MOSFET

KEXIN Industrial 

SMD Type

P-Channel Enhancement MOSFET

SI2335DS (KI2335DS)

■ Features

● VDS (V) =-12V

● ID =-4.0A (VGS =-4.5V)

● RDS(ON) ＜ 51mΩ (VGS =-4.5V)

● RDS(ON) ＜ 70mΩ (VGS =-2.5V)

● RDS(ON) ＜ 106mΩ (VGS =-1.8V)

G1

S2

3D

SOT-23

2.9 +0.1

-0.1

0.4 +0.1

-0.1

3

1

2

0.95 +0.1

-0.1

1.9 +0.1

-0.1

MOSFET

Unit: mm

0.1 +0.05

-0.01

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Ta = 25℃

Ta = 70℃

Pulsed Drain Current

Power Dissipation

Ta = 25℃

Ta = 70℃

Thermal Resistance.Junction- to-Ambient t≤5 sec

Steady State

Thermal Resistance.Junction- to-Foot

Junction Temperature

Storage Temperature Range

Symbol

VDS

VGS

ID

IDM

PD

RthJA

RthJF

TJ

Tstg

5 sec

Steady State

-12

±8

-4.0

-3.2

-3.3

-2.6

-15

1.25

0.75

0.8

0.48

100

166

50

150

-55 to 150

Unit

V

A

W

℃/W

℃

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