SI2335DS-T1-E3 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd

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SI2335DS-T1-E3

P-Channel 30 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI2335DS-T1-E3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

0.080

10

TJ = 150 °C

1

TJ = 25 °C

0.060

0.040

0.020

www.VBsemi.tw

ID = 5.4 A

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2

ID = 250 μA

1.75

1.5

1.25

0.000

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

10

8

6

4

2

TA = 25 °C

1

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.01

0.1

1

10

Time (s)

100

1000

Single Pulse Power (Junction-to-Ambient)

10

5

Limited by RDS(on)*

100 μs

1

1 ms

10 ms

0.1

100 ms

10s, 1 s

DC

0.01

0.001

TA = 25 °C

Single Pulse

BVDSS Limited

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

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