3N50Z(2012) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

3N50Z
(Rev.:2012)

3A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N50Z

Preliminary

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=400V, ID=3A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=250V, ID=3A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=3A, VGS=0V

Body Diode Reverse Recovery Time

trr

IS=3A, VGS=0V,

Body Diode Reverse Recovery Charge

QRR

dIF/dt=100A/µs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

10 13 nC

1.5

nC

5.5

nC

10 30 ns

25 60 ns

35 80 ns

25 60 ns

3A

12 A

1.4 V

170

ns

0.7

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-747.a

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