3N50G-TN3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

3N50G-TN3-T

3A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N50

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

Forward

Gate- Source Leakage Current

Reverse

ON CHARACTERISTICS

IGSS

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=1.5A

DYNAMIC PARAMETERS

Input Capacitance

CISS

Output Capacitance

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=400V, ID=3A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=250V, ID=3A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=3A, VGS=0V

Body Diode Reverse Recovery Time

trr

IS=3A, VGS=0V,

Body Diode Reverse Recovery Charge

QRR

dIF/dt=100A/µs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

500

V

1 µA

+100 nA

-100 nA

2.0

4.0 V

2.2 3.2 Ω

280 365 pF

50 65 pF

8.5 11 pF

10 13 nC

1.5

nC

5.5

nC

10 30 ns

25 60 ns

35 80 ns

25 60 ns

3A

12 A

1.4 V

170

ns

0.7

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-530.C

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