3N50G-TF3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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3N50G-TF3-T

3A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N50

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous (TC=25°C)

ID

Pulsed (Note 2)

IDM

3 (Note 5)

A

12 (Note 5)

A

Avalanche Current (Note 2)

IAR

3

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 4)

EAR

200

mJ

6.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220F

Power Dissipation (TC=25°C)

TO-252

TO-220F

PD

Derate above 25°C

TO-252

25

W

50

0.2

0.4

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

5. Drain current limited by maximum junction temperature

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220F

TO-252

TO-220F

TO-252

SYMBOL

θJA

θJC

RATINGS

62.5

110

4.9

2.5

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-530.C

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