3N50L-TN3-R Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
3N50L-TN3-R Datasheet PDF : 9 Pages
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3N50L-TN3-R
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
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VDS
VGS
RG
RD
D.U.T.
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
t d(off) tf
Fig. 10b - Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V DS
tp
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD A
Fig. 12a - Unclamped Inductive Test Circuit
I AS
Fig. 12b - Unclamped Inductive Waveforms
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