3N40L-TN3-R Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
3N40L-TN3-R Datasheet PDF : 9 Pages
| |||
3N40L-TN3-R
www.VBsemi.tw
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
2.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.1 Ab
VDS = 50 V, ID = 3.1 A
650
-
-
V
-
670
- mV/°C
2.5
-
5.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
2.1
Ω
3.9
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
1417
-
VDS = 25 V,
-
177
-
f = 1.0 MHz, see fig. 5
-
7.0
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
1912
-
VGS = 0 V VDS = 520 V, f = 1.0 MHz
-
48
-
VDS = 0 V to 520 Vc
-
84
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
48
Qgs
VGS = 10 V
ID = 3.2 A, VDS = 400 V
-
-
12
nC
see fig. 6 and 13b
Qgd
-
-
19
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 325 V, ID = 3.2 A
RG = 9.1 Ω, RD = 62 Ω,
see fig. 10b
-
14
-
-
20
-
ns
-
34
-
Fall Time
tf
-
18
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
4
A
-
-
21
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.2 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
493
739
ns
TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µsb
-
2.1
3.2
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. t = 60 s, f = 60 Hz.
E-mail：China@VBsemi TEL:86-755-83251052
2
Share Link: 