3N04H4 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
3N04H4 Datasheet PDF : 7 Pages
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3N04H4 TO220
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
5
VGS = 10 thru 5 V
200
4
www.VBsemi.tw
150
VGS = 4 V
100
50
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
400
TC = - 55 °C
320
240
TC = 25 °C
160
80
TC = 125 °C
3
2
1
0
0
0.010
0.008
0.006
0.004
0.002
TC = 125 °C
TC = 25 °C
TC = - 55 °C
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
VGS = 4.5 V
VGS = 10 V
0
0
15
30
45
60
75
90
ID - Drain Current (A)
Transconductance
4200
3600
Ciss
3000
2400
1800
1200
600
Crss
Coss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
0.0000
0
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 20 V
6
VDS = 10 V
4
VDS = 30 V
2
0
0
50
100
150
200
250
Qg - Total Gate Charge (nC)
Gate Charge
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