3N0406 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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3N0406 Datasheet PDF : 7 Pages
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3N0406 TO220
N-Channel 40-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0055 at VGS = 10 V
40
0.0070 at VGS = 4.5 V
ID (A)a, c
100
90
Qg (Typ.)
130 nC
TO-220AB
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Rectification
• Power Supplies
D
RoHS
COMPLIANT
G
GDS
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
100a, c
90c
31b
25b
270
85
320
110a, c
2.6b
312a
200
3.13b
2.0b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Steady State
RthJA
Maximum Junction-to-Case
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
Typical
32
0.33
Maximum
40
0.4
Unit
V
A
V
A
W
°C
Unit
°C/W
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