3N60 Ver la hoja de datos (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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3N60 Datasheet PDF : 7 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
3N60 3N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
3N60
600
V
Drain-Source Voltage
3N65
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
3.0
A
12
A
Avalanche Energy Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
200
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
W
TO-220F
34
W
Power Dissipation TO-251/IPAK
PD
(TC = 25°С)
50
W
TO-252/DPAK
50
W
Junction Temperature
TJ
+150
°С
Ambient Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=3.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
110
110
62.5
62.5
2.50
2.50
1.67
3.68
UNIT
℃/W
℃/W
3N60 3N65
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