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3N80ZG-TF1-T Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd

Número de pieza
componentes Descripción
Fabricante
3N80ZG-TF1-T
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
3N80ZG-TF1-T Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
3N80ZG-TF1-T
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
91114_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
www.VBsemi.tw
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1
0 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-5
91114_11
PDM
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
E-mail:China@VBsemi TEL:86-755-83251052
5

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