3N80ZG-TF1-R(2013) Ver la hoja de datos (PDF) - Unisonic Technologies

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3N80ZG-TF1-R
(Rev.:2013)

3 Amps, 800Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N80Z

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

Drain-Source Voltage (VGS=0V)

Drain-Gate Voltage (RG=20kΩ)

Gate-Source Voltage

Gate-Source Breakdown Voltage (IGS=±1mA)

Insulation Withstand Voltage (DC)

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

SYMBOL

VDSS

VDGR

VGSS

BVGSO

VISO

IAR

ID

IDM

EAS

dv/dt

RATINGS

800

800

±20

30 (MIN)

2500

3

3

10

170

4.5

UNIT

V

V

V

V

V

A

A

A

mJ

V/ns

Power Dissipation

PD

25

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. starting TJ=25 °C, ID=IAR, VDD=50V

4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJC

RATING

62.5

5

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-912.a

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