ES3JF Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
ES3JF Datasheet PDF : 4 Pages
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Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(℃)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
1.0
ES3A-D
ES3F-G
ES3H-J
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF(V)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
150
125
8.3ms Single Half Sine Wave
100
75
50
25
01
10
100
Number of Cycles
10000
FIG.4：TYPICAL REVERSE CHARACTERISTICS
1000 Tj=150℃
100
Tj=100℃
10
Tj=125℃
1.0
Tj=25℃
0.1
0
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
IR
t
IRR
High Diode Semiconductor
2
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