ESD5Z5V Ver la hoja de datos (PDF) - Shanghai Semitech Semiconductor Co., Ltd

Número de pieza

componentes Descripción

Fabricante

ESD5Z5V

STANDARD CAPACITANCE TVS

Shanghai Semitech Semiconductor Co., Ltd 

ESD5Z5V SERIES

Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Symbol

Parameter

IPP Maximum Reverse Peak Pulse Current

VC Clamping Voltage @ IPP

VRWM

IR

IT

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Test Current

VBR Breakdown Voltage @ IT

IF Forward Current

VF Forward Voltage @ IF

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified

VRWM IR(uA) VBR (V)@ IT

(V) @ VRWM (Note 1)

IT

VC (V)

VC (V)

IPP

@ IPP=5 A* @ Max IPP* (A)*

PPK

(W)*

C

(pF)

Device Max Max

Min

mA

Typ

Max

Max Max Typ

ESD5Z3.3 3.3 0.05

5.0

1.0

8.4

14.1

11.2 158 105

ESD5Z5.0 5.0 0.05

6.2

1.0

11.6

18.6

9.4 174 80

ESD5Z6.0 6.0 0.01

6.8

1.0

12.4

20.5

8.8 181 70

ESD5Z7.0 7.0 0.01

7.5

1.0

13.5

22.7

8.8 200 65

*Surge current waveform per Figure 1.

1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃．

Fig1. Pulse Waveform

Share Link: