IRFP22N60KPBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRFP22N60KPBF

Power MOSFET

Vishay Semiconductors 

IRFP22N60K, SiHFP22N60K

Vishay Siliconix

100000

10000

VGS = 0V, f = 1 MHZ

C iss = C gs + C gd , C ds

SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ci s s

1000

Coss

100

Crss

10

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100.0

10.0

TJ = 150°C

1.0

TJ = 25°C

VGS = 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-toDrain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID= 22A

16

12

VDS= 480V

VDS= 300V

VDS= 120V

8

4

0

0

40

80

120

160

QG Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10

100µsec

1msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

1

10

10msec

100

1000 10000

VDS , Drain-toSource Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91208

S11-0445-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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