P0550BT Ver la hoja de datos (PDF) - Unspecified

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P0550BT

N-Channel Enhancement Mode MOSFET

Unspecified 

P0550BT

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

500V

1.75Ω @VGS = 10V

ID

4.5A

TO-220

100% UIS tested

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

Gate-Source Voltage

VDS

500

V

VGS

±30

Continuous Drain Current2

Pulsed Drain Current1, 2

TC = 25 °C

TC = 100 °C

ID

IDM

4.5

3

A

15

Avalanche Current

IAS

5

Avalanche Energy

L = 8.7mH

EAS

109

mJ

Power Dissipation

TC = 25 °C

PD

TC = 100 °C

89

W

36

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

SYMBOL

RqJC

RqJA

TYPICAL

MAXIMUM

1.4

62.5

UNITS

°C / W

Ver 1.0

1

2012/4/16

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