STF32N65M5, STI32N65M5
STP32N65M5, STW32N65M5
Datasheet
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs
in TO-220FP, I²PAK, TO-220 and TO-247 packages
Features
TAB
3
12
TO-220FP
) TAB
t(s 3
c 2
TO-220 1
rodu D(2, TAB)
lete P G(1)
roduct(s) - Obso S(3)
I2PAK 1 2 3
3
12
TO-247
Order codes
VDS at Tjmax.
RDS(on) max.
ID
STF32N65M5
STI32N65M5
STP32N65M5
710 V
119 mΩ
24 A
STW32N65M5
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Package
TO-220FP
I2PAK
TO-220
TO-247
AM01475v1_noZen
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmeshâ„¢ M5
innovative vertical process technology combined with the well-known PowerMESHâ„¢
horizontal layout. The resulting products offer extremely low on-resistance, making
them particularly suitable for applications requiring high power and superior
efficiency.
Obsolete P Product status link
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
DS12808 - Rev 1 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com