STP10NM60ND Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
STP10NM60ND Datasheet PDF : 2 Pages
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Isc N-Channel MOSFET Transistor
STP10NM60ND
·FEATURES
·With TO-220 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃
TC=125℃
8
5
A
IDM
Drain Current-Single Pulsed
32
A
PD
Total Dissipation @TC=25℃
70
W
Tch
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
UNIT
1.79
℃/W
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