STD9NM40N Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD9NM40N

N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD9NM40N, STP9NM40N

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

Zero gate voltage

VDS = 400 V

drain current (VGS = 0) VDS = 400 V, TC = 125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on-

resistance

VGS = 10 V, ID = 2.5 A

Min. Typ. Max. Unit

400

V

1 µA

100 µA

± 100 nA

2

3

4

V

0.73 0.79 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

365

pF

-

30

- pF

2.3

pF

Equivalent output

Coss(eq)(1) capacitance time

related

VDS = 0 to 50 V, VGS = 0

- 147.5 - pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID=0

-

5.4

-

Ω

Qg

Total gate charge

VDD = 320 V, ID = 5.6 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 17)

14

nC

-

3

- nC

7

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/18

Doc ID 023762 Rev 2

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