STD9NM40N Ver la hoja de datos (PDF) - STMicroelectronics

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STD9NM40N

N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

STD9NM40N, STP9NM40N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(1)

PTOT

dv/dt (2)

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

Tstg Storage temperature

Tj Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 5.6 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS

Value

400

± 25

5.6

4.3

22.4

60

40

- 55 to 150

150

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-pcb Thermal resistance junction-pcb max

Value

DPAK

TO-220

2.08

50

Unit

V

V

A

A

W

V/ns

°C

°C

Unit

°C/W

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2

A

Single pulse avalanche energy

EAS (starting Tj = 25°C, ID = IAR, VDD = 50 V)

140

mJ

Doc ID 023762 Rev 2

3/18

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