BT131-800 Ver la hoja de datos (PDF) - WeEn Semiconductors
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BT131-800 Datasheet PDF : 13 Pages
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WeEn Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
tgt
rate of change of
commutating voltage
gate-controlled turn-on
time
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 1.4 A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VD = 800 V; Tj = 125 °C
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
RGT1(ext) = 1 kΩ; Fig. 12
VD = 400 V; Tj = 125 °C; dIcom/dt = 0.5 A/
ms; IT = 1 A; gate open circuit
ITM = 1.5 A; VD = 800 V; IG = 0.1 A; dIG/
dt = 5 A/μs
BT131-800
4Q Triac
Min Typ Max Unit
-
0.4 3
mA
-
1.3 3
mA
-
1.4 3
mA
-
3.8 7
mA
-
1.2 5
mA
-
4
8
mA
-
1
5
mA
-
2.5 8
mA
-
1.3 5
mA
-
1.2 1
V
-
0.7 1
V
0.2 0.3 -
V
-
0.1 0.5 mA
10
20
-
V/μs
2
-
-
V/μs
-
2
-
μs
BT131-800
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 April 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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