KDB3632 Ver la hoja de datos (PDF) - KEXIN Industrial
Número de pieza
componentes Descripción
Fabricante
KDB3632 Datasheet PDF : 2 Pages
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SMD Type
KDB3632(FDB3632)
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Symbol
VDSS
Drain cut-off current
IDSS
Gate leakage current
Gate threshold voltage
IGSS
VGS(th)
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain "Miller" Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
tON
td(ON)
tr
td(OFF)
tf
tOFF
VSD
trr
QRR
Testconditons
ID=250ìA VGS=0V
VDS=80V,VGS=0
VDS=80V,VGS=0,TC=150
VGS= 20V
VDS = VGS, ID = 250ìA
VGS=10V,ID=80A
VGS=6V,ID=40A
VGS=10V,ID=80A,TC=175
VDS=25V,VGS=0,f=1MHZ
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 50 V, ID = 80A,Ig=1.0mA
VDD = 50 V, ID = 80A,
VGS = 10 V, RGEN = 3.6
ISD=80A
ISD=40A
ISD = 75A, dISD/dt =100A/ìs
ISD = 75A, dISD/dt =100A/ìs
MOSFET
Min Typ Max Unit
100
V
1
A
250
A
100 nA
2.0
4.0 V
0.0075 0.009
0.009 0.015 Ù
0.018 0.022
6000
pF
820
pF
200
pF
84 110 nC
11 14 nC
30
nC
20
nC
20
nC
102 ns
30
ns
39
ns
96
ns
46
ns
213 ns
1.25 V
1.0 V
64 ns
120 nC
2 www.kexin.com.cn
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